… The Li 15±w Si 4 notation designates that this phase has slightly variable stoichiometry.
The Li y Si, Li x Si, and Li z Si notation represent amorphous Li-Si phases with different …

… This property can be written as <w> = w 0 , where w 0 is the strain energy density of a
perfectly flat film and the operator <w> means averaging w along the plane of the film. Since the …

… Gardner et aL8’ observed stress changes due to the precipitation of TiAl, in layered W i
films… Caswell et al."2 observed that the thickness dependence of the strength of W films on Ni …

… , Professor Nix was Director of Stanford's Center for Materials Research. Professor Nix is …
Professor Nix teaches courses on dislocation theory and mechanical properties of materials…

We show that the indentation size effect for crystalline materials can be accurately modeled
using the concept of geometrically necessary dislocations. The model leads to the following …

When a crystal deforms plastically, phenomena such as dislocation storage, multiplication,
motion, pinning, and nucleation occur over the submicron-to-nanometer scale. Here we …

… MF Doerner and WD Nix: Interpreting the data from depth-sensing indentation instruments
… MF Doerner and WD Nix: Interpreting the data from depth-sensing indentation instruments …

We examined the stress associated with crystallite coalescence during the initial stages of
growth in thin polycrystalline films with island growth morphology. As growing crystallites …

… As the depth of indentation increases, the hardness decreases for the case of W on Al and
glass, stays almost constant for the W film on Si, and increases for the case of W on sapphire. …

… Although the models derived by Matthews and Blakeslee, Freund and Nix give a good
account of the motion of isolated dislocations in thin films, they do not account for discrete …