In a single crystal of semiconductor the impurity concentration may vary from p‐type to n‐type
producing a mechanically continuous rectifying junction. The theory of potential distribution …

The effects of diffusion of electrons through a thin p-type layer of germanium have been
studied in specimens consisting of two n-type regions with the p-type region interposed. It is …

… We shall denote the reverse biases at terminals 1 and 2 by W and W+AW, respectively.
These biases cause a current Iper unit length in the z-direction to flow from terminal 1 to terminal …

The phenomena of secondary ionization, avalanche breakdown and microplasma phenomena
in p-n junctions are analyzed using a simplified model in which holes and electrons have …

… We now wish to consider the sum P(m) exp(2srimg) Xu'(w —2m.), found by locating these
Wannier functions on the atoms at positions 2evr. When we insert a'(w —2msr), as de6ned …

The method of effective mass, extended to apply to gradual shifts in energy bands resulting
from deformations of the crystal lattice, is used to estimate the interaction between electrons …

… The ideal theory of a pn junction of Shockley accounts for the electrical … For example,
Shockley's ideal theory predicts a saturation current for the pn … RN Noyce, CT Sah, and W. …

… ce between t ese from this, w ic … As the boun—dary moves to the right a distance W,
however, the — y dislocations move a distance W/p so that each y plane is cut …

The spectral distribution of the rate of photon generation for the photon-radiative recombination
of electrons and holes in germanium is determined from known optical properties by …

Sometimes this is made by the addition of various quantities of metal 8 to metal A. It is found
that the crystals of the alloy are very like those of the pure metal save that upon some of the …