… E 0 of the corresponding absorber material; E 0 expresses the steepness of the absorption
edge below the bandgap.2 Small values of E … materials, a small E 0 appears to correlate well …

… where α(E) is the absorption probability of a photon with energy E, and k B T is the Boltzmann
constant and the absolute temperature (equivalent to 25.7 meV at room temperature), h is …

Fragile X syndrome (FXS) is caused by the full mutation (>200 CGG repeats) in the Fragile
X Mental Retardation 1 (FMR1) gene. It is the most common inherited cause of intellectual …

… Also, 2D-RT passivation enables minimization of the device energy loss (E loss = E g –
qV OC , where q is electron charge and E g is the optical bandgap) up to 0.34 eV, which …

… This condition demands perovskite crystals and surfaces of high electronic quality. To increase
the performance of single-junction wide–band gap PSCs, much research has focused on …

… An analysis of electronic structural data showed that conduction band bending of the perovskite
and C 60 facilitated electron extraction. A monolithic perovskite-silicon tandem solar cell …

… d,e, The structures of the crystals from the loading compositions CsPbI 1.4 Br 1.6 and
CsPbI 1.75 Br 1.25 (d) and Rb 0.15 Cs 0.85 PbI 1.75 Br 1.25 (e) as viewed down the …

BACKGROUND: The effect of emotional intelligence and its dimensions on job satisfaction
and organisational commitment of nurses has been investigated in this study. OBJECTIVES: …

… the molecular interactions between perovskite and PMMA reveals that the carbonyl (CO)
groups on the PMMA are responsible for the excellent passivation via Lewis‐base electronic …

… e, Photovoltaic performance for bifacial tandems with different perovskite bandgaps, measured
only with front light (including minimum and maximum values, and the box plots show the …